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- Manufacturer No：IRF740PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF740PBF
- SKU：206147
- Description：MOSFET N-CH 400V 10A TO-220AB
User Guide
User Guide
IRF740PBF Details
MOSFET N-CH 400V 10A TO-220AB
IRF740PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Packaging: Tube
- Published: 2011
- Max Junction Temperature (Tj): 150°C
- Factory Lead Time: 11 Weeks
- Element Configuration: Single
- Continuous Drain Current (ID): 10A
- Voltage - Rated DC: 400V
- Drain to Source Breakdown Voltage: 400V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Width: 4.7mm
- Turn-Off Delay Time: 50 ns
- Turn On Delay Time: 14 ns
- Fall Time (Typ): 24 ns
- Weight: 6.000006g
- Resistance: 550mOhm
- Power Dissipation-Max: 125W Tc
- Height: 19.89mm
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Termination: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Current Rating: 10A
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 400V
- Dual Supply Voltage: 400V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Length: 10.41mm
- Power Dissipation: 125W
- Nominal Vgs: 4 V
- Drain to Source Resistance: 550mOhm
- Current - Continuous Drain (Id) @ 25°C: 10A Tc
- Rise Time: 27ns
- Input Capacitance: 1.4nF
- Rds On Max: 550 mΩ
- Recovery Time: 790 ns
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