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  • Manufacturer No:
    IRFR220TRPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    208143
  • Description:
    Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R
  • Quantity:
      • RFQ
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Inventory:15765
  • Qty Unit Price price
  • 1 $150.89 $150.89
  • 10 $149.396 $1493.96
  • 100 $147.916 $14791.6
  • 1000 $146.451 $146451
  • 10000 $145 $1450000

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  • Manufacturer No:
    IRFR220TRPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFR220TRPBF
  • SKU:
    208143
  • Description:
    Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R

IRFR220TRPBF Details

Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R

IRFR220TRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 3
  • Published: 2013
  • Terminal Form: GULL WING
  • Drain to Source Breakdown Voltage: 200V
  • Terminal Finish: Matte Tin (Sn)
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Length: 6.73mm
  • Power Dissipation: 2.5W
  • Resistance: 800mOhm
  • Additional Feature: AVALANCHE RATED
  • Rise Time: 22 ns
  • Turn-Off Delay Time: 19 ns
  • Weight: 1.437803g
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Rds On (Max) @ Id, Vgs: 800m Ω @ 2.9A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Pin Count: 3
  • Factory Lead Time: 10 Weeks
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 10
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Height: 2.39mm
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Width: 6.22mm
  • Fall Time (Typ): 13 ns
  • Continuous Drain Current (ID): 4.8A
  • Subcategory: FET General Purpose Powers
  • Turn On Delay Time: 7.2 ns
  • Power Dissipation-Max: 2.5W Ta 42W Tc
  • Current - Continuous Drain (Id) @ 25°C: 4.8A Tc

Excellent

Based on reviews

Excellent

Based on reviews

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