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- Manufacturer No：IRFBG30
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFBG30
- SKU：209505
- Description：MOSFET N-CH 1000V 3.1A TO-220AB
User Guide
User Guide
IRFBG30 Details
MOSFET N-CH 1000V 3.1A TO-220AB
IRFBG30 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Published: 2014
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Voltage - Rated DC: 1kV
- FET Type: N-Channel
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Fall Time (Typ): 20 ns
- Turn On Delay Time: 12 ns
- Current Rating: 3.1A
- Length: 10.41mm
- Weight: 6.000006g
- Rds On Max: 5 Ω
- Height: 9.01mm
- Turn-Off Delay Time: 89 ns
- Input Capacitance: 980pF
- Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Drain to Source Breakdown Voltage: 1kV
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Width: 4.7mm
- Drain to Source Resistance: 5Ohm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Rise Time: 25ns
- Continuous Drain Current (ID): 3.1A
- Power Dissipation: 125W
- Nominal Vgs: 4 V
- Power Dissipation-Max: 125W Tc
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 3.1A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
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