IRFIB6N60APBFVishay Siliconix
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    • Manufacturer No：
      IRFIB6N60APBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      213639
    • Description：
      MOSFET N-CH 600V 5.5A TO220FP
    • Quantity：
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    Inventory:900
    • Qty Unit Price price
    • 1 $5828.426 $5828.426
    • 10 $5770.718 $57707.18
    • 100 $5713.582 $571358.2
    • 1000 $5657.011 $5657011
    • 10000 $5601 $56010000

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    • Manufacturer No：
      IRFIB6N60APBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFIB6N60APBF
    • SKU：
      213639
    • Description：
      MOSFET N-CH 600V 5.5A TO220FP

    User Guide

    User Guide

    IRFIB6N60APBF Details

    MOSFET N-CH 600V 5.5A TO220FP

    IRFIB6N60APBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Lead Free: Lead Free
    • Factory Lead Time: 8 Weeks
    • Number of Pins: 3
    • Max Operating Temperature: 150°C
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Drain to Source Voltage (Vdss): 600V
    • Gate to Source Voltage (Vgs): 30V
    • FET Type: N-Channel
    • Width: 4.83mm
    • Supplier Device Package: TO-220-3
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Vgs (Max): ±30V
    • Rise Time: 25ns
    • Height: 9.8mm
    • Resistance: 750mOhm
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Nominal Vgs: 4 V
    • Length: 10.63mm
    • Input Capacitance: 1.4nF
    • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
    • Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Min Operating Temperature: -55°C
    • Packaging: Tube
    • Published: 2016
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 600V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Threshold Voltage: 4V
    • Power Dissipation: 60W
    • Turn-Off Delay Time: 30 ns
    • Continuous Drain Current (ID): 5.5A
    • Turn On Delay Time: 13 ns
    • Fall Time (Typ): 22 ns
    • Drain to Source Resistance: 750mOhm
    • Weight: 6.000006g
    • Power Dissipation-Max: 60W Tc
    • Current - Continuous Drain (Id) @ 25°C: 5.5A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
    • Rds On Max: 750 mΩ
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