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- Manufacturer No：IRF9520
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF9520
- SKU：214266
- Description：MOSFET P-CH 100V 6.8A TO-220AB
User Guide
User Guide
IRF9520 Details
MOSFET P-CH 100V 6.8A TO-220AB
IRF9520 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 100V
- Max Operating Temperature: 175°C
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Width: 4.7mm
- Input Capacitance: 390pF
- Power Dissipation: 60W
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain to Source Resistance: 600mOhm
- Turn-Off Delay Time: 21 ns
- Continuous Drain Current (ID): 6.8A
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Power Dissipation-Max: 60W Tc
- Turn On Delay Time: 9.6 ns
- Current - Continuous Drain (Id) @ 25°C: 6.8A Tc
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Published: 2011
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Fall Time (Typ): 25 ns
- FET Type: P-Channel
- Resistance: 600mOhm
- Length: 10.41mm
- Weight: 6.000006g
- Drain to Source Breakdown Voltage: -100V
- Rds On Max: 600 mΩ
- Height: 9.01mm
- Rise Time: 29ns
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
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