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- Manufacturer No：IRL640STRLPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRL640STRLPBF
- SKU：215268
- Description：MOSFET N-CH 200V 17A D2PAK
User Guide
User Guide
IRL640STRLPBF Details
MOSFET N-CH 200V 17A D2PAK
IRL640STRLPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Factory Lead Time: 8 Weeks
- Voltage: 200V
- Drain to Source Breakdown Voltage: 200V
- Max Operating Temperature: 150°C
- Element Configuration: Single
- FET Type: N-Channel
- Height: 4.83mm
- Turn On Delay Time: 8 ns
- Continuous Drain Current (ID): 17A
- Width: 9.65mm
- Drain to Source Resistance: 180mOhm
- Supplier Device Package: D2PAK
- Turn-Off Delay Time: 44 ns
- Power Dissipation: 3.1W
- Current - Continuous Drain (Id) @ 25°C: 17A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Power Dissipation-Max: 3.1W Ta 125W Tc
- Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 200V
- Published: 2015
- Gate to Source Voltage (Vgs): 10V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Length: 10.67mm
- Current: 17A
- Resistance: 180mOhm
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Vgs (Max): ±10V
- Weight: 1.437803g
- Fall Time (Typ): 52 ns
- Drive Voltage (Max Rds On,Min Rds On): 4V 5V
- Rise Time: 83ns
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
- Rds On Max: 2.7 mΩ
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