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- Manufacturer No：IRLD014
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLD014
- SKU：216791
- Description：MOSFET N-CH 60V 1.7A 4-DIP
User Guide
User Guide
IRLD014 Details
MOSFET N-CH 60V 1.7A 4-DIP
IRLD014 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Packaging: Tube
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 60V
- Max Operating Temperature: 150°C
- Length: 5mm
- Technology: MOSFET (Metal Oxide)
- Current Rating: 1.7A
- Drain to Source Resistance: 200mOhm
- Turn-Off Delay Time: 17 ns
- Fall Time (Typ): 110 ns
- Rise Time: 110ns
- Rds On Max: 200 mΩ
- Turn On Delay Time: 9.3 ns
- Power Dissipation-Max: 1.3W Ta
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Width: 6.29mm
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
- Mounting Type: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Number of Pins: 4
- Published: 2013
- Voltage - Rated DC: 60V
- Drain to Source Breakdown Voltage: 60V
- Gate to Source Voltage (Vgs): 10V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Continuous Drain Current (ID): 1.7A
- Power Dissipation: 1.3W
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Vgs (Max): ±10V
- Package / Case: 4-DIP (0.300, 7.62mm)
- Input Capacitance: 400pF
- Drive Voltage (Max Rds On,Min Rds On): 4V 5V
- Height: 3.37mm
- Current - Continuous Drain (Id) @ 25°C: 1.7A Ta
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 5V
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