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  • Manufacturer No:
    IRFL9110
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    218680
  • Description:
    MOSFET P-CH 100V 1.1A SOT223
  • Quantity:
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Inventory:66040
  • Qty Unit Price price
  • 1 $0.886 $0.886
  • 10 $0.877 $8.77
  • 100 $0.868 $86.8
  • 1000 $0.859 $859
  • 10000 $0.85 $8500

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  • Manufacturer No:
    IRFL9110
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFL9110
  • SKU:
    218680
  • Description:
    MOSFET P-CH 100V 1.1A SOT223

IRFL9110 Details

MOSFET P-CH 100V 1.1A SOT223

IRFL9110 Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • RoHS Status: Non-RoHS Compliant
  • Part Status: Obsolete
  • Packaging: Tube
  • Lead Free: Contains Lead
  • Max Operating Temperature: 150°C
  • Power Dissipation: 2W
  • Operating Temperature: -55°C~150°C TJ
  • Vgs (Max): ±20V
  • Turn-Off Delay Time: 15 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Package / Case: TO-261-4, TO-261AA
  • Fall Time (Typ): 17 ns
  • Voltage - Rated DC: -100V
  • Rise Time: 27ns
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Power Dissipation-Max: 2W Ta 3.1W Tc
  • Current - Continuous Drain (Id) @ 25°C: 1.1A Tc
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Min Operating Temperature: -55°C
  • Number of Pins: 4
  • Published: 2016
  • Drain to Source Voltage (Vdss): 100V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Continuous Drain Current (ID): 1.1A
  • FET Type: P-Channel
  • Drain to Source Resistance: 1.2Ohm
  • Input Capacitance: 200pF
  • Supplier Device Package: SOT-223
  • Drain to Source Breakdown Voltage: -100V
  • Rds On Max: 1.2 Ω
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Current Rating: -1.1A
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V

Excellent

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Excellent

Based on reviews

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