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- Manufacturer No：IRLD120
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLD120
- SKU：220209
- Description：MOSFET N-CH 100V 1.3A 4-DIP
User Guide
User Guide
IRLD120 Details
MOSFET N-CH 100V 1.3A 4-DIP
IRLD120 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Packaging: Tube
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 100V
- Max Operating Temperature: 175°C
- Length: 5mm
- Technology: MOSFET (Metal Oxide)
- Current Rating: 1.3A
- Power Dissipation: 1.3W
- Resistance: 270mOhm
- Turn-Off Delay Time: 21 ns
- Package / Case: 4-DIP (0.300, 7.62mm)
- Fall Time (Typ): 64 ns
- Power Dissipation-Max: 1.3W Ta
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Input Capacitance: 490pF
- Rise Time: 64ns
- Rds On Max: 270 mΩ
- Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 5V
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 4
- Published: 2016
- Voltage - Rated DC: 100V
- Drain to Source Breakdown Voltage: 100V
- Gate to Source Voltage (Vgs): 10V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Continuous Drain Current (ID): 1.3A
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Drain to Source Resistance: 270mOhm
- Vgs (Max): ±10V
- Turn On Delay Time: 9.8 ns
- Drive Voltage (Max Rds On,Min Rds On): 4V 5V
- Height: 3.37mm
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Width: 6.29mm
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Current - Continuous Drain (Id) @ 25°C: 1.3A Ta
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