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  • Manufacturer No:
    IRFR1N60ATRPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    220381
  • Description:
    MOSFET N-CH 600V 1.4A DPAK
  • Quantity:
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Inventory:6269
  • Qty Unit Price price
  • 1 $248.707 $248.707
  • 10 $246.244 $2462.44
  • 100 $243.805 $24380.5
  • 1000 $241.391 $241391
  • 10000 $239 $2390000

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  • Manufacturer No:
    IRFR1N60ATRPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFR1N60ATRPBF
  • SKU:
    220381
  • Description:
    MOSFET N-CH 600V 1.4A DPAK

IRFR1N60ATRPBF Details

MOSFET N-CH 600V 1.4A DPAK

IRFR1N60ATRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Contact Plating: Tin
  • Factory Lead Time: 8 Weeks
  • Published: 2013
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Drain to Source Voltage (Vdss): 600V
  • Height: 2.39mm
  • FET Type: N-Channel
  • Length: 6.73mm
  • Continuous Drain Current (ID): 1.4A
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Resistance: 7Ohm
  • Width: 6.22mm
  • Power Dissipation: 36W
  • Weight: 1.437803g
  • Turn On Delay Time: 9.8 ns
  • Rds On Max: 7 Ω
  • Current - Continuous Drain (Id) @ 25°C: 1.4A Tc
  • Input Capacitance: 229pF
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Min Operating Temperature: -55°C
  • Number of Pins: 3
  • Max Operating Temperature: 150°C
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Fall Time (Typ): 20 ns
  • Vgs (Max): ±30V
  • Drain to Source Resistance: 7Ohm
  • Turn-Off Delay Time: 18 ns
  • Supplier Device Package: D-Pak
  • Rise Time: 14ns
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Power Dissipation-Max: 36W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 229pF @ 25V
  • Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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