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- Manufacturer No：SI1012CR-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI1012CR-T1-GE3
- SKU：224591
- Description：VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount
User Guide
User Guide
SI1012CR-T1-GE3 Details
VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount
SI1012CR-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Height: 800μm
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Length: 1.68mm
- Turn On Delay Time: 11 ns
- Rise Time: 16 ns
- Continuous Drain Current (ID): 630mA
- Turn-Off Delay Time: 26 ns
- Power Dissipation: 240mW
- Package / Case: SC-75, SOT-416
- Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
- Resistance: 396mOhm
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- Published: 2013
- REACH SVHC: No SVHC
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Weight: 2.012816mg
- Threshold Voltage: 400mV
- Fall Time (Typ): 11 ns
- Series: TrenchFET?
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Vgs (Max): ±8V
- Width: 860μm
- Drive Voltage (Max Rds On,Min Rds On): 1.5V 4.5V
- Power Dissipation-Max: 240mW Ta
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
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