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- Manufacturer No：IRFPC50
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFPC50
- SKU：224870
- Description：MOSFET N-CH 600V 11A TO-247AC
User Guide
User Guide
IRFPC50 Details
MOSFET N-CH 600V 11A TO-247AC
IRFPC50 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 600V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Vgs (Max): ±20V
- Current Rating: 11A
- Package / Case: TO-247-3
- Drain to Source Resistance: 600mOhm
- Turn On Delay Time: 18 ns
- Width: 5.31mm
- Power Dissipation: 180W
- Weight: 38.000013g
- Rds On Max: 600 mΩ
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Power Dissipation-Max: 180W Tc
- Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Voltage - Rated DC: 600V
- Drain to Source Breakdown Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 11A
- Supplier Device Package: TO-247-3
- Length: 15.87mm
- Input Capacitance: 2.7nF
- Fall Time (Typ): 36 ns
- Height: 20.7mm
- Current - Continuous Drain (Id) @ 25°C: 11A Tc
- Turn-Off Delay Time: 88 ns
- Rise Time: 37ns
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
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