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- Manufacturer No：SI3456BDV-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3456BDV-T1-GE3
- SKU：225514
- Description：MOSFET 30V 6.0A 2.0W 35mohm @ 10V
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User Guide
SI3456BDV-T1-GE3 Details
MOSFET 30V 6.0A 2.0W 35mohm @ 10V
SI3456BDV-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 6
- Max Operating Temperature: 150°C
- Height: 1mm
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Width: 1.65mm
- Length: 3.05mm
- Fall Time (Typ): 10 ns
- Turn-Off Delay Time: 25 ns
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Series: TrenchFET?
- Drain to Source Resistance: 35mOhm
- Weight: 19.986414mg
- Rds On Max: 35 mΩ
- Current - Continuous Drain (Id) @ 25°C: 4.5A Ta
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Lead Free: Lead Free
- Part Status: Obsolete
- Published: 2015
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 4.5A
- Turn On Delay Time: 10 ns
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Rise Time: 15ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Resistance: 35mOhm
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Supplier Device Package: 6-TSOP
- Power Dissipation-Max: 1.1W Ta
- Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
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