Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:28034
- Qty Unit Price price
- 1 $104.064 $104.064
- 10 $103.033 $1030.33
- 100 $102.012 $10201.2
- 1000 $101.001 $101001
- 10000 $100 $1000000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI2307BDS-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2307BDS-T1-E3
- SKU：227037
- Description：MOSFET P-CH 30V 2.5A SOT23-3
User Guide
User Guide
SI2307BDS-T1-E3 Details
MOSFET P-CH 30V 2.5A SOT23-3
SI2307BDS-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2008
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- FET Type: P-Channel
- Rise Time: 12 ns
- Turn On Delay Time: 9 ns
- Series: TrenchFET?
- Threshold Voltage: -3V
- Weight: 1.437803g
- Resistance: 78mOhm
- Power Dissipation-Max: 750mW Ta
- Continuous Drain Current (ID): -2.5A
- Rds On (Max) @ Id, Vgs: 78m Ω @ 3.2A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Power Dissipation: 750mW
- Width: 1.4mm
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Subcategory: Other Transistors
- Turn-Off Delay Time: 25 ns
- Fall Time (Typ): 12 ns
- Height: 1.02mm
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Drain to Source Breakdown Voltage: -30V
- Length: 3.04mm
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 2.5A Ta
- Nominal Vgs: -3 V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
Search for similar products
SI2307BDS-T1-E3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI2307BDS-T1-E3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
