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- Manufacturer No：IRLR120TRR
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLR120TRR
- SKU：227278
- Description：MOSFET N-CH 100V 7.7A DPAK
User Guide
User Guide
IRLR120TRR Details
MOSFET N-CH 100V 7.7A DPAK
IRLR120TRR Specification Parameters
- Part Status: Active
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Pin Count: 3
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- DS Breakdown Voltage-Min: 100V
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- Additional Feature: AVALANCHE RATED
- Pulsed Drain Current-Max (IDM): 31A
- Continuous Drain Current (ID): 7.7A
- Drain-source On Resistance-Max: 0.27Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Rds On (Max) @ Id, Vgs: 270m Ω @ 4.6A, 5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- RoHS Status: Non-RoHS Compliant
- Published: 2016
- Terminal Form: GULL WING
- Drain to Source Voltage (Vdss): 100V
- Time@Peak Reflow Temperature-Max (s): 40
- Terminal Position: SINGLE
- FET Type: N-Channel
- Transistor Application: SWITCHING
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Vgs (Max): ±10V
- Drive Voltage (Max Rds On,Min Rds On): 4V 5V
- Power Dissipation-Max: 2.5W Ta 42W Tc
- Avalanche Energy Rating (Eas): 210 mJ
- Current - Continuous Drain (Id) @ 25°C: 7.7A Tc
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