SI7110DN-T1-GE3Vishay Siliconix
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    • Manufacturer No：
      SI7110DN-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      229776
    • Description：
      MOSFET N-CH 20V 13.5A 1212-8
    • Quantity：
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    Inventory:5300
    • Qty Unit Price price
    • 1 $1.729 $1.729
    • 10 $1.711 $17.11
    • 100 $1.694 $169.4
    • 1000 $1.677 $1677
    • 10000 $1.66 $16600

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    • Manufacturer No：
      SI7110DN-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI7110DN-T1-GE3
    • SKU：
      229776
    • Description：
      MOSFET N-CH 20V 13.5A 1212-8

    User Guide

    User Guide

    SI7110DN-T1-GE3 Details

    MOSFET N-CH 20V 13.5A 1212-8

    SI7110DN-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Peak Reflow Temperature (Cel): 260
    • Threshold Voltage: 2.5V
    • Time@Peak Reflow Temperature-Max (s): 30
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 20V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Width: 3.05mm
    • Rise Time: 10 ns
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Subcategory: FET General Purpose Powers
    • Height: 1.04mm
    • Package / Case: PowerPAK? 1212-8
    • Continuous Drain Current (ID): 21.1A
    • Drain-source On Resistance-Max: 0.0053Ohm
    • Rds On (Max) @ Id, Vgs: 5.3m Ω @ 21.1A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Pin Count: 8
    • Published: 2013
    • Number of Terminations: 5
    • Terminal Finish: Matte Tin (Sn)
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Terminal Form: C BEND
    • Length: 3.05mm
    • Fall Time (Typ): 10 ns
    • Pulsed Drain Current-Max (IDM): 60A
    • Turn On Delay Time: 12 ns
    • Series: TrenchFET?
    • Turn-Off Delay Time: 36 ns
    • Power Dissipation-Max: 1.5W Ta
    • JESD-30 Code: S-XDSO-C5
    • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
    • Current - Continuous Drain (Id) @ 25°C: 13.5A Ta
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