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- Manufacturer No：SI2319DS-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2319DS-T1-E3
- SKU：230285
- Description：MOSFET P-CH 40V 2.3A SOT23-3
User Guide
User Guide
SI2319DS-T1-E3 Details
MOSFET P-CH 40V 2.3A SOT23-3
SI2319DS-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Current: 3A
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Subcategory: Other Transistors
- Turn-Off Delay Time: 25 ns
- Rise Time: 15 ns
- Turn On Delay Time: 7 ns
- Height: 1.12mm
- Threshold Voltage: -3V
- Drain to Source Breakdown Voltage: -40V
- Resistance: 82mOhm
- Continuous Drain Current (ID): -3A
- Nominal Vgs: -3 V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Published: 2011
- Max Junction Temperature (Tj): 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Voltage: 40V
- Power Dissipation: 750mW
- Width: 1.4mm
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Fall Time (Typ): 15 ns
- FET Type: P-Channel
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Length: 3.04mm
- Weight: 1.437803g
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Power Dissipation-Max: 750mW Ta
- Current - Continuous Drain (Id) @ 25°C: 2.3A Ta
- Rds On (Max) @ Id, Vgs: 82m Ω @ 3A, 10V
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