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- Manufacturer No：IRF720
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF720
- SKU：231022
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 3.3A Tc 3.3A 50W 13ns
User Guide
User Guide
IRF720 Details
Tube Through Hole N-Channel Single Mosfet Transistor 3.3A Tc 3.3A 50W 13ns
IRF720 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Published: 2014
- Element Configuration: Single
- Voltage - Rated DC: 400V
- Drain to Source Breakdown Voltage: 400V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain to Source Resistance: 1.8Ohm
- Continuous Drain Current (ID): 3.3A
- Length: 10.41mm
- Rise Time: 14ns
- Power Dissipation-Max: 50W Tc
- Rds On Max: 1.8 Ω
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 400V
- Power Dissipation: 50W
- FET Type: N-Channel
- Vgs (Max): ±20V
- Width: 4.7mm
- Turn On Delay Time: 10 ns
- Turn-Off Delay Time: 30 ns
- Current Rating: 3.3A
- Fall Time (Typ): 13 ns
- Weight: 6.000006g
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Height: 9.01mm
- Current - Continuous Drain (Id) @ 25°C: 3.3A Tc
- Input Capacitance: 410pF
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