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- Manufacturer No：IRFP240
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFP240
- SKU：231053
- Description：MOSFET N-CH 200V 20A TO-247AC
User Guide
User Guide
IRFP240 Details
MOSFET N-CH 200V 20A TO-247AC
IRFP240 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Voltage - Rated DC: 200V
- Drain to Source Breakdown Voltage: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Continuous Drain Current (ID): 20A
- Power Dissipation: 150W
- Technology: MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Supplier Device Package: TO-247-3
- Length: 15.87mm
- Turn On Delay Time: 14 ns
- Fall Time (Typ): 36 ns
- Rds On Max: 180 mΩ
- Current - Continuous Drain (Id) @ 25°C: 20A Tc
- Power Dissipation-Max: 150W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 12A, 10V
- Mounting Type: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Current Rating: 20A
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Vgs (Max): ±20V
- Package / Case: TO-247-3
- Turn-Off Delay Time: 45 ns
- Drain to Source Resistance: 180mOhm
- Width: 5.31mm
- Height: 20.7mm
- Input Capacitance: 1.3nF
- Weight: 38.000013g
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Rise Time: 51ns
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