IRFB9N60APBF
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1Number of Channels
1Lead Free
Lead FreeMin Operating Temperature
-55°CFactory Lead Time
8 WeeksPackaging
TubeNumber of Pins
3Max Operating Temperature
150°CPublished
2014REACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VElement Configuration
SingleVoltage - Rated DC
600VDrain to Source Voltage (Vdss)
600VDrain to Source Breakdown Voltage
600VGate to Source Voltage (Vgs)
30VOperating Temperature
-55°C~150°C TJFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Threshold Voltage
4VPackage / Case
TO-220-3Width
4.7mmSupplier Device Package
TO-220ABVgs(th) (Max) @ Id
4V @ 250μATurn-Off Delay Time
30 nsVgs (Max)
±30VRise Time
25nsTurn On Delay Time
13 nsFall Time (Typ)
22 nsLength
10.41mmResistance
750mOhmDrain to Source Resistance
750mOhmWeight
6.000006gNominal Vgs
4 VContinuous Drain Current (ID)
9.2ACurrent Rating
9.2APower Dissipation
170WHeight
9.01mmInput Capacitance
1.4nFInput Capacitance (Ciss) (Max) @ Vds
1400pF @ 25VPower Dissipation-Max
170W TcGate Charge (Qg) (Max) @ Vgs
49nC @ 10VRds On Max
750 mΩCurrent - Continuous Drain (Id) @ 25°C
9.2A TcRds On (Max) @ Id, Vgs
750mOhm @ 5.5A, 10V