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- Manufacturer No：SI3932DV-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI3932DV-T1-GE3
- SKU：235546
- Description：MOSFET 30V 3.7A DUAL N-CH MOSFET
User Guide
User Guide
SI3932DV-T1-GE3 Details
MOSFET 30V 3.7A DUAL N-CH MOSFET
SI3932DV-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Max Junction Temperature (Tj): 150°C
- Element Configuration: Dual
- REACH SVHC: Unknown
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Height: 1.1mm
- Threshold Voltage: 2.2V
- Turn-Off Delay Time: 10 ns
- Rise Time: 15 ns
- Turn On Delay Time: 5 ns
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Series: TrenchFET?
- Current - Continuous Drain (Id) @ 25°C: 3.7A
- Subcategory: FET General Purpose Powers
- Resistance: 58mOhm
- Nominal Vgs: 1.2 V
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 6
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Published: 2010
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 30V
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Fall Time (Typ): 10 ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation: 1.4W
- Continuous Drain Current (ID): 3.4A
- FET Feature: Logic Level Gate
- Drain Current-Max (Abs) (ID): 3.7A
- FET Type: 2 N-Channel (Dual)
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Weight: 19.986414mg
- Power Dissipation: 1.14W
- Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
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