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- Manufacturer No：SI1902CDL-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI1902CDL-T1-GE3
- SKU：235561
- Description：MOSFET 20V 1A DUAL NCH
User Guide
User Guide
SI1902CDL-T1-GE3 Details
MOSFET 20V 1A DUAL NCH
SI1902CDL-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 6
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Max Junction Temperature (Tj): 150°C
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Height: 1.1mm
- Operating Mode: ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C: 1.1A
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Fall Time (Typ): 9 ns
- Turn-Off Delay Time: 11 ns
- Series: TrenchFET?
- Subcategory: FET General Purpose Powers
- Max Power Dissipation: 420mW
- Resistance: 235mOhm
- Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Published: 2016
- Number of Pins: 6
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Continuous Drain Current (ID): 1A
- Drain to Source Breakdown Voltage: 20V
- Transistor Application: SWITCHING
- Threshold Voltage: 1.5V
- Power Dissipation: 300mW
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time: 4 ns
- Rise Time: 13 ns
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Weight: 28.009329mg
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
- Rds On (Max) @ Id, Vgs: 235m Ω @ 1A, 4.5V
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