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  • Manufacturer No:
    IRFPF30PBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    235581
  • Description:
    MOSFET N-CH 900V 3.6A TO-247AC
  • Quantity:
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Inventory:0
  • Qty Unit Price price
  • 1 $6846.136 $6846.136
  • 10 $6778.352 $67783.52
  • 100 $6711.239 $671123.9
  • 1000 $6644.791 $6644791
  • 10000 $6579 $65790000

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  • Manufacturer No:
    IRFPF30PBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFPF30PBF
  • SKU:
    235581
  • Description:
    MOSFET N-CH 900V 3.6A TO-247AC

IRFPF30PBF Details

MOSFET N-CH 900V 3.6A TO-247AC

IRFPF30PBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Factory Lead Time: 8 Weeks
  • Number of Pins: 3
  • Max Operating Temperature: 150°C
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Package / Case: TO-247-3
  • Drain to Source Voltage (Vdss): 900V
  • Length: 15.87mm
  • Turn On Delay Time: 14 ns
  • Input Capacitance: 1.2nF
  • Width: 5.31mm
  • Weight: 38.000013g
  • Resistance: 3.7Ohm
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A Tc
  • Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Packaging: Tube
  • Published: 2011
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Fall Time (Typ): 30 ns
  • Supplier Device Package: TO-247-3
  • Rise Time: 25ns
  • Continuous Drain Current (ID): 3.6A
  • Turn-Off Delay Time: 90 ns
  • Power Dissipation: 125W
  • Height: 20.7mm
  • Power Dissipation-Max: 125W Tc
  • Drain to Source Resistance: 3.7Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Rds On Max: 3.7 Ω

Excellent

Based on reviews

Excellent

Based on reviews

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