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- Manufacturer No：SI1922EDH-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI1922EDH-T1-GE3
- SKU：235872
- Description：VISHAY - SI1922EDH-T1-GE3 - MOSFET, NN CH, 20V, 1.3A, SOT363
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User Guide
SI1922EDH-T1-GE3 Details
VISHAY - SI1922EDH-T1-GE3 - MOSFET, NN CH, 20V, 1.3A, SOT363
SI1922EDH-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 6
- Pin Count: 6
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Max Junction Temperature (Tj): 150°C
- Element Configuration: Dual
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Height: 1.1mm
- Gate to Source Voltage (Vgs): 8V
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID): 1.3A
- Packaging: Digi-Reel?
- FET Feature: Logic Level Gate
- Series: TrenchFET?
- FET Type: 2 N-Channel (Dual)
- Fall Time (Typ): 220 ns
- Weight: 7.512624mg
- Turn-Off Delay Time: 645 ns
- Base Part Number: SI1922
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 6
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Threshold Voltage: 400mV
- Max Power Dissipation: 1.25W
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Turn On Delay Time: 22 ns
- Rise Time: 80 ns
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Power Dissipation: 740mW
- Rds On (Max) @ Id, Vgs: 198m Ω @ 1A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
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