IRFR9110TRPBF
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1Number of Channels
1Radiation Hardening
NoLead Free
Lead FreeMin Operating Temperature
-55°CFactory Lead Time
8 WeeksNumber of Pins
3Drain to Source Voltage (Vdss)
100VMax Operating Temperature
150°CPublished
2014REACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VElement Configuration
SingleGate to Source Voltage (Vgs)
20VHeight
2.39mmOperating Temperature
-55°C~150°C TJTechnology
MOSFET (Metal Oxide)Vgs (Max)
±20VLength
6.73mmPackage / Case
TO-252-3, DPak (2 Leads + Tab), SC-63Turn On Delay Time
10 nsPower Dissipation
2.5WTurn-Off Delay Time
15 nsFET Type
P-ChannelVgs(th) (Max) @ Id
4V @ 250μAResistance
1.2OhmDrain to Source Resistance
1.2OhmWidth
6.22mmInput Capacitance
200pFContinuous Drain Current (ID)
3.1AFall Time (Typ)
17 nsThreshold Voltage
-2VSupplier Device Package
D-PakWeight
1.437803gDrain to Source Breakdown Voltage
-100VRise Time
27nsPower Dissipation-Max
2.5W Ta 25W TcRds On Max
1.2 ΩInput Capacitance (Ciss) (Max) @ Vds
200pF @ 25VCurrent - Continuous Drain (Id) @ 25°C
3.1A TcGate Charge (Qg) (Max) @ Vgs
8.7nC @ 10VRds On (Max) @ Id, Vgs
1.2Ohm @ 1.9A, 10V