IRF530
Vishay Siliconix
Moisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1Number of Channels
1Radiation Hardening
NoRoHS Status
Non-RoHS CompliantMin Operating Temperature
-55°CPart Status
ObsoletePackaging
TubeNumber of Pins
3Lead Free
Contains LeadDrain to Source Voltage (Vdss)
100VDrain to Source Breakdown Voltage
100VPublished
2011Max Operating Temperature
175°CREACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VElement Configuration
SingleGate to Source Voltage (Vgs)
20VFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Operating Temperature
-55°C~175°C TJVgs (Max)
±20VPackage / Case
TO-220-3Width
4.7mmSupplier Device Package
TO-220ABTurn On Delay Time
10 nsVgs(th) (Max) @ Id
4V @ 250μAContinuous Drain Current (ID)
14AResistance
160mOhmDrain to Source Resistance
160mOhmLength
10.41mmFall Time (Typ)
24 nsNominal Vgs
2 VTurn-Off Delay Time
23 nsWeight
6.000006gCurrent - Continuous Drain (Id) @ 25°C
14A TcPower Dissipation
88WHeight
9.01mmGate Charge (Qg) (Max) @ Vgs
26nC @ 10VRds On Max
160 mΩRise Time
34nsPower Dissipation-Max
88W TcInput Capacitance (Ciss) (Max) @ Vds
670pF @ 25VInput Capacitance
670pFRds On (Max) @ Id, Vgs
160mOhm @ 8.4A, 10V