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- Manufacturer No：IRFU210
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFU210
- SKU：240191
- Description：MOSFET N-CH 200V 2.6A I-PAK
User Guide
User Guide
IRFU210 Details
MOSFET N-CH 200V 2.6A I-PAK
IRFU210 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Voltage - Rated DC: 200V
- Drain to Source Breakdown Voltage: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Vgs (Max): ±20V
- Power Dissipation: 2.5W
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 2.6A
- Turn-Off Delay Time: 14 ns
- Width: 2.38mm
- Rds On Max: 1.5 Ω
- Turn On Delay Time: 8.2 ns
- Fall Time (Typ): 8.9 ns
- Power Dissipation-Max: 2.5W Ta 25W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Length: 6.73mm
- Drain to Source Resistance: 1.5Ohm
- Current Rating: 2.6A
- Height: 6.22mm
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Rise Time: 17ns
- Weight: 329.988449mg
- Input Capacitance: 140pF
- Supplier Device Package: TO-251AA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 2.6A Tc
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