IRF644PBF
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1Number of Channels
1Radiation Hardening
NoLead Free
Lead FreeContact Plating
TinMin Operating Temperature
-55°CFactory Lead Time
8 WeeksPackaging
TubeNumber of Pins
3Voltage - Rated DC
250VDrain to Source Voltage (Vdss)
250VDrain to Source Breakdown Voltage
250VMax Operating Temperature
150°CPublished
2008REACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VElement Configuration
SingleGate to Source Voltage (Vgs)
20VOperating Temperature
-55°C~150°C TJFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Threshold Voltage
4VVgs (Max)
±20VPackage / Case
TO-220-3Width
4.7mmSupplier Device Package
TO-220ABVgs(th) (Max) @ Id
4V @ 250μACurrent Rating
14AContinuous Drain Current (ID)
14ATurn On Delay Time
11 nsRecovery Time
500 nsLength
10.41mmPower Dissipation
125WResistance
280mOhmDrain to Source Resistance
280mOhmWeight
6.000006gNominal Vgs
4 VInput Capacitance
1.3nFTurn-Off Delay Time
53 nsPower Dissipation-Max
125W TcFall Time (Typ)
49 nsRise Time
24nsCurrent - Continuous Drain (Id) @ 25°C
14A TcHeight
9.01mmInput Capacitance (Ciss) (Max) @ Vds
1300pF @ 25VGate Charge (Qg) (Max) @ Vgs
68nC @ 10VRds On Max
280 mΩRds On (Max) @ Id, Vgs
280mOhm @ 8.4A, 10V