Add to like
Add to project list
  • Manufacturer No:
    IRF644PBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    240646
  • Description:
    MOSFET N-CH 250V 14A TO-220AB
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:1305
  • Qty Unit Price price
  • 1 $2413.163 $2413.163
  • 10 $2389.27 $23892.7
  • 100 $2365.613 $236561.3
  • 1000 $2342.191 $2342191
  • 10000 $2319 $23190000

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    IRF644PBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF644PBF
  • SKU:
    240646
  • Description:
    MOSFET N-CH 250V 14A TO-220AB

IRF644PBF Details

MOSFET N-CH 250V 14A TO-220AB

IRF644PBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Min Operating Temperature: -55°C
  • Packaging: Tube
  • Voltage - Rated DC: 250V
  • Drain to Source Breakdown Voltage: 250V
  • Published: 2008
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Current Rating: 14A
  • Turn On Delay Time: 11 ns
  • Length: 10.41mm
  • Resistance: 280mOhm
  • Weight: 6.000006g
  • Input Capacitance: 1.3nF
  • Power Dissipation-Max: 125W Tc
  • Rise Time: 24ns
  • Height: 9.01mm
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Contact Plating: Tin
  • Factory Lead Time: 8 Weeks
  • Number of Pins: 3
  • Drain to Source Voltage (Vdss): 250V
  • Max Operating Temperature: 150°C
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Width: 4.7mm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Continuous Drain Current (ID): 14A
  • Recovery Time: 500 ns
  • Power Dissipation: 125W
  • Drain to Source Resistance: 280mOhm
  • Nominal Vgs: 4 V
  • Turn-Off Delay Time: 53 ns
  • Fall Time (Typ): 49 ns
  • Current - Continuous Drain (Id) @ 25°C: 14A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Rds On Max: 280 mΩ

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via