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- Manufacturer No：IRFD024
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD024
- SKU：241127
- Description：Transistor NPN IRFD024 INTERNATIONAL RECTIFIER Ampere=2.5 Volt=60 N4
User Guide
User Guide
IRFD024 Details
Transistor NPN IRFD024 INTERNATIONAL RECTIFIER Ampere=2.5 Volt=60 N4
IRFD024 Specification Parameters
- Part Status: Active
- Mounting Type: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Number of Pins: 4
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 60V
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Current Rating: 2.5A
- Operating Temperature: -55°C~175°C TJ
- Drain to Source Resistance: 100mOhm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 13 ns
- Rds On Max: 100 mΩ
- Fall Time (Typ): 58 ns
- Current - Continuous Drain (Id) @ 25°C: 2.5A Ta
- Rise Time: 58ns
- Width: 6.29mm
- Input Capacitance: 640pF
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Voltage - Rated DC: 60V
- Drain to Source Breakdown Voltage: 60V
- Factory Lead Time: 13 Weeks
- Length: 5mm
- Published: 2017
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 2.5A
- Vgs (Max): ±20V
- Turn-Off Delay Time: 25 ns
- Power Dissipation: 1.3W
- Package / Case: 4-DIP (0.300, 7.62mm)
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Power Dissipation-Max: 1.3W Ta
- Height: 3.37mm
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 10V
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