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- Manufacturer No：IRFP150
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFP150
- SKU：244300
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 41A Tc 41A 230W 81ns
User Guide
User Guide
IRFP150 Details
Tube Through Hole N-Channel Single Mosfet Transistor 41A Tc 41A 230W 81ns
IRFP150 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Voltage - Rated DC: 100V
- Published: 2015
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 41A
- Package / Case: TO-247-3
- Rise Time: 120ns
- Length: 15.87mm
- Turn On Delay Time: 16 ns
- Height: 20.7mm
- Power Dissipation: 230W
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Rds On Max: 55 mΩ
- Current - Continuous Drain (Id) @ 25°C: 41A Tc
- Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 100V
- Max Operating Temperature: 175°C
- Element Configuration: Single
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Current Rating: 41A
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Supplier Device Package: TO-247-3
- Turn-Off Delay Time: 60 ns
- Drain to Source Resistance: 55mOhm
- Width: 5.31mm
- Weight: 38.000013g
- Power Dissipation-Max: 230W Tc
- Fall Time (Typ): 81 ns
- Input Capacitance: 2.8nF
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
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