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- Manufacturer No：IRFZ14
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFZ14
- SKU：244490
- Description：MOSFET N-CH 60V 10A TO-220AB
User Guide
User Guide
IRFZ14 Details
MOSFET N-CH 60V 10A TO-220AB
IRFZ14 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Voltage - Rated DC: 60V
- Drain to Source Breakdown Voltage: 60V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Current Rating: 10A
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Width: 4.7mm
- Turn On Delay Time: 10 ns
- Drain to Source Resistance: 200mOhm
- Turn-Off Delay Time: 13 ns
- Length: 10.41mm
- Weight: 6.000006g
- Rds On Max: 200 mΩ
- Height: 9.01mm
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
- Mounting Type: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 60V
- Max Operating Temperature: 175°C
- Element Configuration: Single
- Continuous Drain Current (ID): 10A
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Rise Time: 50ns
- Input Capacitance: 300pF
- Fall Time (Typ): 19 ns
- Current - Continuous Drain (Id) @ 25°C: 10A Tc
- Power Dissipation: 43W
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Power Dissipation-Max: 43W Tc
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