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- Manufacturer No：SI4483ADY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4483ADY-T1-GE3
- SKU：245181
- Description：MOSFET P-CH 30V 19.2A 8-SOIC
User Guide
User Guide
SI4483ADY-T1-GE3 Details
MOSFET P-CH 30V 19.2A 8-SOIC
SI4483ADY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Pin Count: 8
- Published: 2013
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Length: 5mm
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Transistor Application: SWITCHING
- Configuration: SINGLE WITH BUILT-IN DIODE
- FET Type: P-Channel
- Turn On Delay Time: 70 ns
- Continuous Drain Current (ID): 13.5A
- Vgs (Max): ±25V
- Weight: 186.993455mg
- Vgs(th) (Max) @ Id: 2.6V @ 250μA
- Resistance: 8.8mOhm
- Threshold Voltage: -2.1V
- Current - Continuous Drain (Id) @ 25°C: 19.2A Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 8
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 30
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Height: 1.5mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Rise Time: 150 ns
- Series: TrenchFET?
- Fall Time (Typ): 28 ns
- Turn-Off Delay Time: 43 ns
- Power Dissipation: 2.9W
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V
- Rds On (Max) @ Id, Vgs: 8.8m Ω @ 10A, 10V
- Power Dissipation-Max: 2.9W Ta 5.9W Tc
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