SI2315BDS-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI2315BDS-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      245778
    • Description：
      Transistor: P-MOSFET; unipolar; -12V; -3A; 0.75W; SOT23
    • Quantity：
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    Inventory:99375
    • Qty Unit Price price
    • 1 $0.544 $0.544
    • 10 $0.538 $5.38
    • 100 $0.532 $53.2
    • 1000 $0.526 $526
    • 10000 $0.52 $5200

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    • Manufacturer No：
      SI2315BDS-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI2315BDS-T1-E3
    • SKU：
      245778
    • Description：
      Transistor: P-MOSFET; unipolar; -12V; -3A; 0.75W; SOT23

    User Guide

    User Guide

    SI2315BDS-T1-E3 Details

    Transistor: P-MOSFET; unipolar; -12V; -3A; 0.75W; SOT23

    SI2315BDS-T1-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • Pin Count: 3
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 30
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Drain to Source Breakdown Voltage: -12V
    • Turn-Off Delay Time: 50 ns
    • Resistance: 50mOhm
    • Rise Time: 35 ns
    • Height: 1.12mm
    • Vgs (Max): ±8V
    • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
    • Continuous Drain Current (ID): -3A
    • Current - Continuous Drain (Id) @ 25°C: 3A Ta
    • Power Dissipation-Max: 750mW Ta
    • Nominal Vgs: -900 mV
    • Rds On (Max) @ Id, Vgs: 50m Ω @ 3.85A, 4.5V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Terminal Position: DUAL
    • Number of Pins: 3
    • Current: 3A
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Voltage: 12V
    • Max Junction Temperature (Tj): 150°C
    • Published: 2005
    • Element Configuration: Single
    • Power Dissipation: 750mW
    • Width: 1.4mm
    • Gate to Source Voltage (Vgs): 8V
    • Subcategory: Other Transistors
    • Dual Supply Voltage: -12V
    • Turn On Delay Time: 15 ns
    • Fall Time (Typ): 35 ns
    • FET Type: P-Channel
    • Series: TrenchFET?
    • Length: 3.04mm
    • Weight: 1.437803g
    • Vgs(th) (Max) @ Id: 900mV @ 250μA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
    • Threshold Voltage: -900mV
    • Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
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