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- Manufacturer No：IRFR9020
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFR9020
- SKU：246562
- Description：MOSFET P-CH 50V 9.9A DPAK
User Guide
User Guide
IRFR9020 Details
MOSFET P-CH 50V 9.9A DPAK
IRFR9020 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Height: 2.39mm
- Technology: MOSFET (Metal Oxide)
- Length: 6.73mm
- Fall Time (Typ): 25 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Width: 6.22mm
- Drain to Source Breakdown Voltage: -50V
- Supplier Device Package: D-Pak
- Continuous Drain Current (ID): 9.9A
- Turn On Delay Time: 8.2 ns
- Rds On Max: 280 mΩ
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 9.9A Tc
- Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V
- Mounting Type: Surface Mount
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Drain to Source Voltage (Vdss): 50V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Vgs (Max): ±20V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type: P-Channel
- Turn-Off Delay Time: 12 ns
- Voltage - Rated DC: -50V
- Drain to Source Resistance: 280mOhm
- Weight: 1.437803g
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Power Dissipation-Max: 42W Tc
- Rise Time: 67ns
- Input Capacitance: 490pF
- Current Rating: -9.9A
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