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- Manufacturer No：IRFU420
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFU420
- SKU：246678
- Description：MOSFET N-CH 500V 2.4A I-PAK
User Guide
User Guide
IRFU420 Details
MOSFET N-CH 500V 2.4A I-PAK
IRFU420 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Voltage - Rated DC: 500V
- Drain to Source Breakdown Voltage: 500V
- Width: 2.39mm
- FET Type: N-Channel
- Vgs (Max): ±20V
- Drain to Source Resistance: 3Ohm
- Current Rating: 2.4A
- Turn On Delay Time: 8 ns
- Fall Time (Typ): 16 ns
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Power Dissipation: 42W
- Weight: 329.988449mg
- Power Dissipation-Max: 2.5W Ta 42W Tc
- Current - Continuous Drain (Id) @ 25°C: 2.4A Tc
- Rise Time: 8.6ns
- Mounting Type: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Length: 6.73mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 2.4A
- Height: 6.22mm
- Input Capacitance: 360pF
- Turn-Off Delay Time: 33 ns
- Rds On Max: 3 Ω
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Supplier Device Package: TO-251AA
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
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