SI7153DN-T1-GE3Vishay Siliconix
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    • Manufacturer No：
      SI7153DN-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      247979
    • Description：
      MOSFET P-CH 30V 18A POWERPAK1212
    • Quantity：
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    Inventory:6094
    • Qty Unit Price price
    • 1 $0.668 $0.668
    • 10 $0.661 $6.61
    • 100 $0.654 $65.4
    • 1000 $0.647 $647
    • 10000 $0.64 $6400

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    • Manufacturer No：
      SI7153DN-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI7153DN-T1-GE3
    • SKU：
      247979
    • Description：
      MOSFET P-CH 30V 18A POWERPAK1212

    User Guide

    User Guide

    SI7153DN-T1-GE3 Details

    MOSFET P-CH 30V 18A POWERPAK1212

    SI7153DN-T1-GE3 Specification Parameters

    • Part Status: Active
    • Mounting Type: Surface Mount
    • RoHS Status: RoHS Compliant
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Factory Lead Time: 14 Weeks
    • Operating Temperature: -55°C~150°C TJ
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Current - Continuous Drain (Id) @ 25°C: 18A Tc
    • Resistance: 9.5mOhm
    • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 15V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Terminal Finish: Matte Tin (Sn)
    • Drain to Source Voltage (Vdss): 30V
    • Technology: MOSFET (Metal Oxide)
    • FET Type: P-Channel
    • Vgs (Max): ±25V
    • Package / Case: PowerPAK? 1212-8
    • Power Dissipation-Max: 52W Tc
    • Rds On (Max) @ Id, Vgs: 9.5m Ω @ 20A, 10V
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