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- Manufacturer No：SI2303BDS-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2303BDS-T1-GE3
- SKU：248649
- Description：MOSFET P-CH 30V 1.49A SOT23-3
User Guide
User Guide
SI2303BDS-T1-GE3 Details
MOSFET P-CH 30V 1.49A SOT23-3
SI2303BDS-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Subcategory: Other Transistors
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Fall Time (Typ): 40 ns
- Turn On Delay Time: 55 ns
- Threshold Voltage: -3V
- Drain-source On Resistance-Max: 0.2Ohm
- Power Dissipation-Max: 700mW Ta
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
- Continuous Drain Current (ID): -1.49A
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- Published: 2013
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Turn-Off Delay Time: 10 ns
- FET Type: P-Channel
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Power Dissipation: 700mW
- Rise Time: 40ns
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Nominal Vgs: -3 V
- Current - Continuous Drain (Id) @ 25°C: 1.49A Ta
- Rds On (Max) @ Id, Vgs: 200m Ω @ 1.7A, 10V
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