SI1032X-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI1032X-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      248705
    • Description：
      MOSFET N-CH 20V 200MA SC89-3
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    • Manufacturer No：
      SI1032X-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI1032X-T1-E3
    • SKU：
      248705
    • Description：
      MOSFET N-CH 20V 200MA SC89-3

    User Guide

    User Guide

    SI1032X-T1-E3 Details

    MOSFET N-CH 20V 200MA SC89-3

    SI1032X-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Lead Free: Lead Free
    • Part Status: Obsolete
    • Max Operating Temperature: 150°C
    • REACH SVHC: Unknown
    • Drain to Source Voltage (Vdss): 20V
    • Gate to Source Voltage (Vgs): 6V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Length: 1.7mm
    • Turn-Off Delay Time: 50 ns
    • Fall Time (Typ): 25 ns
    • Drain to Source Resistance: 5Ohm
    • Series: TrenchFET?
    • Rds On Max: 5 Ω
    • Drive Voltage (Max Rds On,Min Rds On): 1.5V 4.5V
    • Power Dissipation: 340mW
    • Vgs (Max): ±6V
    • Nominal Vgs: 700 mV
    • Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Min Operating Temperature: -55°C
    • Number of Pins: 3
    • Published: 2008
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 20V
    • Height: 800μm
    • Continuous Drain Current (ID): 200mA
    • Technology: MOSFET (Metal Oxide)
    • Turn On Delay Time: 50 ns
    • Width: 950μm
    • Resistance: 5Ohm
    • Rise Time: 25ns
    • Weight: 29.993795mg
    • Package / Case: SC-89, SOT-490
    • Vgs(th) (Max) @ Id: 1.2V @ 250μA
    • Current - Continuous Drain (Id) @ 25°C: 200mA Ta
    • Power Dissipation-Max: 300mW Ta
    • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
    • Supplier Device Package: SC-89-3
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