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- Manufacturer No：IRFPE50PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFPE50PBF
- SKU：249133
- Description：MOSFET N-CH 800V 7.8A TO-247AC
User Guide
User Guide
IRFPE50PBF Details
MOSFET N-CH 800V 7.8A TO-247AC
IRFPE50PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Drain to Source Voltage (Vdss): 800V
- Dual Supply Voltage: 800V
- Package / Case: TO-247-3
- Resistance: 1.2Ohm
- Length: 15.87mm
- Turn On Delay Time: 19 ns
- Continuous Drain Current (ID): 7.8A
- Nominal Vgs: 4 V
- Fall Time (Typ): 39 ns
- Power Dissipation: 190W
- Power Dissipation-Max: 190W Tc
- Rds On Max: 1.2 Ω
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 7.8A Tc
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.7A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Termination: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Published: 2008
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Voltage - Rated DC: 800V
- Drain to Source Breakdown Voltage: 800V
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Supplier Device Package: TO-247-3
- Drain to Source Resistance: 1.2Ohm
- Turn-Off Delay Time: 120 ns
- Current Rating: 7.8A
- Width: 5.31mm
- Height: 20.7mm
- Weight: 38.000013g
- Lead Pitch: 5.45mm
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Rise Time: 38ns
- Input Capacitance: 3.1nF
- Recovery Time: 980 ns
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