Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:21695
- Qty Unit Price price
- 1 $872.028 $872.028
- 10 $863.394 $8633.94
- 100 $854.845 $85484.5
- 1000 $846.381 $846381
- 10000 $838 $8380000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI2333CDS-T1-GE3
- Manufacturer：Vishay
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2333CDS-T1-GE3
- SKU：251171
- Description：MOSFET P-CH 12V 7.1A SOT-23
User Guide
User Guide
SI2333CDS-T1-GE3 Details
MOSFET P-CH 12V 7.1A SOT-23
SI2333CDS-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Width: 1.4mm
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Drain to Source Breakdown Voltage: -12V
- Fall Time (Typ): 35 ns
- FET Type: P-Channel
- Turn On Delay Time: 13 ns
- Series: TrenchFET?
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Length: 3.04mm
- Weight: 1.437803g
- Threshold Voltage: -400mV
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Continuous Drain Current (ID): -5.1A
- Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 6V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Voltage: 12V
- Max Junction Temperature (Tj): 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Subcategory: Other Transistors
- Power Dissipation: 2.5W
- Rise Time: 35 ns
- Turn-Off Delay Time: 45 ns
- Height: 1.12mm
- Resistance: 35mOhm
- Vgs (Max): ±8V
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Current: 71A
- Nominal Vgs: -1 V
- Current - Continuous Drain (Id) @ 25°C: 7.1A Tc
- Power Dissipation-Max: 1.25W Ta 2.5W Tc
- Rds On (Max) @ Id, Vgs: 35m Ω @ 5.1A, 4.5V
Search for similar products
SI2333CDS-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay & SI2333CDS-T1-GE3
Vishay — Manufacturer Introduction
Vishay Intertechnology is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. Vishay has grown through acquisitions to include such top names as Dale, Sfernice, Draloric, Sprague, Vitramon, Siliconix, General Semiconductor, BCcomponents, and Beyschlag. Vishay's portfolio of brands represents an unmatched collection of discrete semiconductors and passive components. All of these brands and products are part of one global manufacturer: Vishay.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
