IRF9Z24PBFVishay Siliconix
    Add to like
    Add to project list
    • Manufacturer No：
      IRF9Z24PBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      254192
    • Description：
      Transistor: P-MOSFET; unipolar; -60V; -7.7A; 60W; TO220AB
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price
    • 1 $1.772 $1.772
    • 10 $1.754 $17.54
    • 100 $1.736 $173.6
    • 1000 $1.718 $1718

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRF9Z24PBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF9Z24PBF
    • SKU：
      254192
    • Description：
      Transistor: P-MOSFET; unipolar; -60V; -7.7A; 60W; TO220AB

    User Guide

    User Guide

    IRF9Z24PBF Details

    Transistor: P-MOSFET; unipolar; -60V; -7.7A; 60W; TO220AB

    IRF9Z24PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Lead Free: Lead Free
    • Factory Lead Time: 8 Weeks
    • Number of Pins: 3
    • Published: 2014
    • Max Junction Temperature (Tj): 175°C
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~175°C TJ
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • Power Dissipation: 60W
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Turn On Delay Time: 13 ns
    • Resistance: 280mOhm
    • Drain to Source Breakdown Voltage: -60V
    • Fall Time (Typ): 29 ns
    • Height: 19.89mm
    • Power Dissipation-Max: 60W Tc
    • Nominal Vgs: -4 V
    • Rise Time: 68ns
    • Input Capacitance: 570pF
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Min Operating Temperature: -55°C
    • Packaging: Tube
    • Drain to Source Voltage (Vdss): 60V
    • Max Operating Temperature: 175°C
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Technology: MOSFET (Metal Oxide)
    • Vgs (Max): ±20V
    • Width: 4.7mm
    • Turn-Off Delay Time: 15 ns
    • FET Type: P-Channel
    • Continuous Drain Current (ID): 11A
    • Length: 10.41mm
    • Drain to Source Resistance: 280mOhm
    • Weight: 6.000006g
    • Current - Continuous Drain (Id) @ 25°C: 11A Tc
    • Threshold Voltage: -4V
    • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
    • Rds On Max: 280 mΩ
    • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
    • Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
    Search for similar products

    IRF9Z24PBF Similar Products

    The four parts on the right have similar specifications to Vishay Siliconix & IRF9Z24PBF

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via