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- Manufacturer No：SI4942DY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4942DY-T1-E3
- SKU：254627
- Description：MOSFET 40V 7.4A 2.1W 21mohm @ 10V
User Guide
User Guide
SI4942DY-T1-E3 Details
MOSFET 40V 7.4A 2.1W 21mohm @ 10V
SI4942DY-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Pin Count: 8
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Gate to Source Voltage (Vgs): 20V
- Dual Supply Voltage: 40V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- Rise Time: 10 ns
- Turn On Delay Time: 13 ns
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Power Dissipation: 1.1W
- Continuous Drain Current (ID): 5.3A
- Resistance: 21mOhm
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Rds On (Max) @ Id, Vgs: 21m Ω @ 7.4A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 8
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Threshold Voltage: 3V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 40V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Fall Time (Typ): 10 ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Max Power Dissipation: 1.1W
- Nominal Vgs: 3 V
- Subcategory: FET General Purpose Powers
- Turn-Off Delay Time: 31 ns
- Input Capacitance: 4nF
- Base Part Number: SI4942
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