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- Manufacturer No：IRFR120TR
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFR120TR
- SKU：255144
- Description：MOSFET N-CH 100V 7.7A DPAK
User Guide
User Guide
IRFR120TR Details
MOSFET N-CH 100V 7.7A DPAK
IRFR120TR Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Published: 2016
- Voltage - Rated DC: 100V
- Voltage: 100V
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Height: 2.39mm
- FET Type: N-Channel
- Vgs (Max): ±20V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn-Off Delay Time: 18 ns
- Input Capacitance: 360pF
- Supplier Device Package: D-Pak
- Continuous Drain Current (ID): 7.7A
- Turn On Delay Time: 6.8 ns
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Power Dissipation-Max: 2.5W Ta 42W Tc
- Current - Continuous Drain (Id) @ 25°C: 7.7A Tc
- Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 100V
- Drain to Source Breakdown Voltage: 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Length: 6.73mm
- Power Dissipation: 2.5W
- Width: 6.22mm
- Fall Time (Typ): 17 ns
- Drain to Source Resistance: 270mOhm
- Weight: 1.437803g
- Current Rating: 7.7A
- Rise Time: 27ns
- Current: 77A
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Rds On Max: 270 mΩ
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