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SI7178DP-T1-GE3123
  • Manufacturer No:
    SI7178DP-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    256293
  • Description:
    Single N-Channel 100 V 0.014 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
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Inventory:6973
  • Qty Unit Price price
  • 1 $4186.353 $4186.353
  • 10 $4144.903 $41449.03
  • 100 $4103.864 $410386.4
  • 1000 $4063.231 $4063231
  • 10000 $4023 $40230000

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SI7178DP-T1-GE3
  • Manufacturer No:
    SI7178DP-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI7178DP-T1-GE3
  • SKU:
    256293
  • Description:
    Single N-Channel 100 V 0.014 Ohms Surface Mount Power Mosfet - PowerPAK SO-8

SI7178DP-T1-GE3 Details

Single N-Channel 100 V 0.014 Ohms Surface Mount Power Mosfet - PowerPAK SO-8

SI7178DP-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Number of Terminations: 5
  • Time@Peak Reflow Temperature-Max (s): 40
  • Published: 2008
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Threshold Voltage: 4.5V
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Terminal Form: C BEND
  • Subcategory: FET General Purpose Power
  • Continuous Drain Current (ID): 60A
  • Series: TrenchFET?
  • Turn-Off Delay Time: 27 ns
  • Height: 1.04mm
  • Vgs(th) (Max) @ Id: 4.5V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C: 60A Tc
  • Power Dissipation: 6.25W
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Power Dissipation-Max: 6.25W Ta 104W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 50V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Pin Count: 8
  • Peak Reflow Temperature (Cel): 260
  • Drain to Source Breakdown Voltage: 100V
  • Factory Lead Time: 14 Weeks
  • REACH SVHC: Unknown
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Length: 4.9mm
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Rise Time: 10 ns
  • Fall Time (Typ): 11 ns
  • Turn On Delay Time: 21 ns
  • Resistance: 14mOhm
  • Package / Case: PowerPAK? SO-8
  • Weight: 506.605978mg
  • Width: 5.89mm
  • JESD-30 Code: R-XDSO-C5
  • Nominal Vgs: 4.5 V
  • Rds On (Max) @ Id, Vgs: 14m Ω @ 10A, 10V

Excellent

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Excellent

Based on reviews

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