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- Manufacturer No：SI3443BDV-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3443BDV-T1-E3
- SKU：256406
- Description：MOSFET P-CH 20V 3.6A 6-TSOP
User Guide
User Guide
SI3443BDV-T1-E3 Details
MOSFET P-CH 20V 3.6A 6-TSOP
SI3443BDV-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Terminations: 6
- Pin Count: 6
- REACH SVHC: No SVHC
- Gate to Source Voltage (Vgs): 12V
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Length: 3.05mm
- Rise Time: 35 ns
- Turn-Off Delay Time: 45 ns
- Resistance: 60mOhm
- Drain to Source Breakdown Voltage: -20V
- Series: TrenchFET?
- Vgs (Max): ±12V
- Weight: 19.986414mg
- Power Dissipation-Max: 1.1W Ta
- Current - Continuous Drain (Id) @ 25°C: 3.6A Ta
- Nominal Vgs: -1.4 V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Published: 2016
- Number of Pins: 6
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Technology: MOSFET (Metal Oxide)
- Height: 990.6μm
- Width: 1.65mm
- Fall Time (Typ): 25 ns
- FET Type: P-Channel
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Continuous Drain Current (ID): 3.6A
- Turn On Delay Time: 22 ns
- Power Dissipation: 1.1W
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Threshold Voltage: -1.4V
- Rds On (Max) @ Id, Vgs: 60m Ω @ 4.7A, 4.5V
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