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- Manufacturer No：SI4164DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4164DY-T1-GE3
- SKU：258907
- Description：MOSFET 30V 30A 6.0W 3.2mohm @ 10V
User Guide
User Guide
SI4164DY-T1-GE3 Details
MOSFET 30V 30A 6.0W 3.2mohm @ 10V
SI4164DY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 8
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Threshold Voltage: 2.5V
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Length: 5mm
- Drain to Source Voltage (Vdss): 30V
- Power Dissipation: 3W
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Continuous Drain Current (ID): 30A
- Operating Mode: ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Height: 1.55mm
- Fall Time (Typ): 16 ns
- Turn-Off Delay Time: 48 ns
- Weight: 186.993455mg
- Resistance: 3.2mOhm
- Power Dissipation-Max: 3W Ta 6W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Published: 2011
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Turn On Delay Time: 35 ns
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Series: TrenchFET?
- Current - Continuous Drain (Id) @ 25°C: 30A Tc
- Rise Time: 16ns
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Rds On (Max) @ Id, Vgs: 3.2m Ω @ 15A, 10V
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