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- Manufacturer No：SI1553CDL-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI1553CDL-T1-GE3
- SKU：264459
- Description：SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363
User Guide
User Guide
SI1553CDL-T1-GE3 Details
SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363
SI1553CDL-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Published: 2016
- Number of Terminations: 6
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 20V
- Transistor Application: SWITCHING
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Package / Case: 6-TSSOP, SC-88, SOT-363
- FET Feature: Logic Level Gate
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- FET Type: N and P-Channel
- Power - Max: 340mW
- Power Dissipation Ambient-Max: 0.29W
- Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Packaging: Tape & Reel (TR)
- Surface Mount: YES
- Terminal Position: DUAL
- Qualification Status: Not Qualified
- Pin Count: 6
- Reach Compliance Code: unknown
- Factory Lead Time: 14 Weeks
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PDSO-G6
- Drain Current-Max (Abs) (ID): 0.7A
- Series: TrenchFET?
- Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
- Drain-source On Resistance-Max: 0.39Ohm
- Power Dissipation-Max (Abs): 0.34W
- Current - Continuous Drain (Id) @ 25°C: 700mA 500mA
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