BSP295H6327XTSA1Infineon
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    • Manufacturer No：
      BSP295H6327XTSA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      BSP295H6327XTSA1
    • SKU：
      2646980
    • Description：
      Trans MOSFET N-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R

    User Guide

    User Guide

    BSP295H6327XTSA1 Details

    Trans MOSFET N-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R

    BSP295H6327XTSA1 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Number of Terminations: 4
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 60V
    • Dual Supply Voltage: 60V
    • Height: 1.6mm
    • Element Configuration: Single
    • Published: 2001
    • Packaging: Cut Tape (CT)
    • Technology: MOSFET (Metal Oxide)
    • Halogen Free: Halogen Free
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Continuous Drain Current (ID): 1.8A
    • Package / Case: TO-261-4, TO-261AA
    • Pulsed Drain Current-Max (IDM): 7.2A
    • Turn On Delay Time: 5.4 ns
    • Series: SIPMOS?
    • Power Dissipation-Max: 1.8W Ta
    • Nominal Vgs: 1.1 V
    • Vgs(th) (Max) @ Id: 1.8V @ 400μA
    • Rds On (Max) @ Id, Vgs: 300m Ω @ 1.8A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Pin Count: 4
    • Factory Lead Time: 10 Weeks
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Max Dual Supply Voltage: 60V
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Width: 3.5mm
    • Power Dissipation: 1.5W
    • Length: 6.5mm
    • Threshold Voltage: 1.1V
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • JESD-30 Code: R-PDSO-G4
    • Fall Time (Typ): 19 ns
    • Turn-Off Delay Time: 27 ns
    • Drain-source On Resistance-Max: 0.5Ohm
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
    • Rise Time: 9.9 ns
    • Current - Continuous Drain (Id) @ 25°C: 1.8A Ta
    • Input Capacitance (Ciss) (Max) @ Vds: 368pF @ 25V
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    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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