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- Manufacturer No：FF1000R17IE4BOSA1
- Manufacturer：Infineon
- Category：Transistors - IGBTs - Modules
- Datasheet：FF1000R17IE4BOSA1
- SKU：2651410
- Description：INFINEON FF1000R17IE4 IGBT Array & Module Transistor, N Channel, 1000 A, 2 V, 6.25 kW, 1.7 kV, Module
User Guide
User Guide
FF1000R17IE4BOSA1 Details
INFINEON FF1000R17IE4 IGBT Array & Module Transistor, N Channel, 1000 A, 2 V, 6.25 kW, 1.7 kV, Module
FF1000R17IE4BOSA1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- RoHS Status: RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 12 Weeks
- NTC Thermistor: Yes
- Qualification Status: Not Qualified
- Number of Pins: 12
- Element Configuration: Dual
- Input: Standard
- Published: 2002
- Case Connection: ISOLATED
- Terminal Form: UNSPECIFIED
- Polarity/Channel Type: N-CHANNEL
- Halogen Free: Not Halogen Free
- Configuration: 2 Independent
- JESD-30 Code: R-XUFM-X7
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
- Power - Max: 6250W
- Turn Off Time-Nom (toff): 1890 ns
- Surface Mount: NO
- Number of Elements: 2
- ECCN Code: EAR99
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pbfree Code: no
- Lead Free: Contains Lead
- Mounting Type: Chassis Mount
- Pin Count: 12
- Transistor Element Material: SILICON
- Number of Terminations: 7
- Package / Case: Module
- Current - Collector Cutoff (Max): 5mA
- Terminal Position: UPPER
- Operating Temperature: -40°C~150°C
- Transistor Application: POWER CONTROL
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Turn On Time: 720 ns
- Input Capacitance (Cies) @ Vce: 81nF @ 25V
- Series: PrimePACK?3
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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