Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:336000
- Qty Unit Price price
- 1 $0.085 $0.085
- 10 $0.084 $0.84
- 100 $0.083 $8.3
- 1000 $0.082 $82
- 10000 $0.081 $810
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：BSS123NH6327XTSA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BSS123NH6327XTSA1
- SKU：2651751
- Description：Single N-Channel 100V 6 Ohm 0.6 nC OptiMOS? Small Signal Mosfet - SOT-23
User Guide
User Guide
BSS123NH6327XTSA1 Details
Single N-Channel 100V 6 Ohm 0.6 nC OptiMOS? Small Signal Mosfet - SOT-23
BSS123NH6327XTSA1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- Factory Lead Time: 10 Weeks
- Published: 2012
- Drain to Source Breakdown Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Power Dissipation: 500mW
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Length: 2.9mm
- FET Type: N-Channel
- Width: 1.3mm
- Halogen Free: Halogen Free
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Continuous Drain Current (ID): 190mA
- Series: OptiMOS?
- Rise Time: 3.2 ns
- Turn-Off Delay Time: 7.4 ns
- Current - Continuous Drain (Id) @ 25°C: 190mA Ta
- Rds On (Max) @ Id, Vgs: 6 Ω @ 190mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 13μA
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Max Dual Supply Voltage: 100V
- Max Junction Temperature (Tj): 150°C
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Height: 1.1mm
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Drain-source On Resistance-Max: 6Ohm
- Fall Time (Typ): 22 ns
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Turn On Delay Time: 2.3 ns
- Power Dissipation-Max: 500mW Ta
- Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20.9pF @ 25V
Search for similar products
BSS123NH6327XTSA1 Similar Products
The four parts on the right have similar specifications to Infineon & BSS123NH6327XTSA1
Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
